Hybrid Graphene Nanoribbon-CMOS tunneling volatile memory fabric

Khasanvis, S. and Habib, K. M. M. and Rahman, M. and Narayanan, P. and Lake, R. K. and Moritz, C. A.. (2011) Hybrid Graphene Nanoribbon-CMOS tunneling volatile memory fabric. In: Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on.

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Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: C, CMOS memory circuits, CMOS SRAM, electrical property, graphene, graphene nanoribbon crossbar based volatile tunneling RAM, hybrid graphene nanoribbon-CMOS tunneling volatile memory fabric, integrated circuit interconnections, multistate memory fabric, nanofabrication, nanostructured materials, Si, silicon, silicon technology approach, SRAM chips, tunnelling, xGNR GNT RAM
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Other Nanostructured Materials > Graphene
Areas of Application > Electronics and Semiconductor Industries
Collections: Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing
Depositing User: Robert Stevens
Date Deposited: 19 Apr 2012 20:35
Last Modified: 02 May 2012 18:03
URI: http://eprints.internano.org/id/eprint/1833

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