Khasanvis, S. and Habib, K. M. M. and Rahman, M. and Narayanan, P. and Lake, R. K. and Moritz, C. A.. (2011) Hybrid Graphene Nanoribbon-CMOS tunneling volatile memory fabric. In: Nanoscale Architectures (NANOARCH), 2011 IEEE/ACM International Symposium on.
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1109/NANOARCH.2011.5941503
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | C, CMOS memory circuits, CMOS SRAM, electrical property, graphene, graphene nanoribbon crossbar based volatile tunneling RAM, hybrid graphene nanoribbon-CMOS tunneling volatile memory fabric, integrated circuit interconnections, multistate memory fabric, nanofabrication, nanostructured materials, Si, silicon, silicon technology approach, SRAM chips, tunnelling, xGNR GNT RAM |
| InterNano Taxonomy: | Nanoscale Objects and Nanostructured Materials > Other Nanostructured Materials > Graphene Areas of Application > Electronics and Semiconductor Industries |
| Collections: | Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing |
| Depositing User: | Robert Stevens |
| Date Deposited: | 19 Apr 2012 20:35 |
| Last Modified: | 02 May 2012 18:03 |
| URI: | http://eprints.internano.org/id/eprint/1833 |
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