A 14-ps Full Width at Half Maximum High-Speed Photoconductor Fabricated with Intersecting InP Nanowires on an Amorphous Surface

Logeeswaran, V.J. and Sarkar, A. and Islam, M.S. and Kobayashi, N.P. and Straznicky, J. and Li, Xuema and Wu, Wei and Mathai, Sagi and Tan, M.R.T. and Wang, Shih-Yuan and Williams, R.S.. (2008) A 14-ps Full Width at Half Maximum High-Speed Photoconductor Fabricated with Intersecting InP Nanowires on an Amorphous Surface. Applied Physics A: Materials Science and Processing, 91 (1). pp. 1-5. ISSN 0947-8396

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Abstract

We demonstrate a high-speed polarization-insensitive photoconductor based on intersecting InP nanowires synthesized between a pair of hydrogenated silicon electrodes deposited on amorphous SiO2 surfaces prepared on silicon substrates. A 14-ps full width at half maximum de-embedded impulse response is measured, which is the fastest reported response for a photodetector fabricated using nanowires. The high-speed electrical signal measurements from the photoconductor are performed by an integrated coplanar waveguide transmission line. The demonstrated ability to grow intersecting InP nanowires on hydrogenated microcrystalline Si surfaces will facilitate the construction of ultra-fast photodetectors on a wide range of substrates.

Item Type: Article
Additional Information: Abstract reprinted with permission from Springer Science+Business Media.
Uncontrolled Keywords: photoconductor
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanowires
Collections: Nanomanufacturing Research Collection
Related URLs:
Depositing User: Rebecca Reznik-Zellen
Date Deposited: 27 Oct 2009 20:31
Last Modified: 15 Jun 2010 18:22
URI: http://eprints.internano.org/id/eprint/203

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