Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers

Chen, S. Y. and Zheng, C. X. and Fuhrer, M. S. and Yan, J.. (2015) Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers. Nano Letters, 15 (4). pp. 2526-2532.

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The two-fold valley degeneracy in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) (Mo,W)(S,Se)(2) is suitable for ``valleytronics'', the storage and manipulation of information utilizing the valley degree of freedom. The conservation of luminescent photon helicity in these 2D crystal monolayers has been widely regarded as a benchmark indicator for charge carrier valley polarization. Here we perform helicity-resolved Raman scattering of the TMDC atomic layers. In drastic contrast to luminescence, the dominant first-order zone-center Raman bands, including the low energy breathing and shear modes as well as the higher energy optical phonons, are found to either maintain or completely switch the helicity of incident photons. In addition to providing a useful tool for characterization of TMDC atomic layers, these experimental observations shed new light on the connection between photon helicity and valley polarization.

Item Type: Article
Additional Information: ISI Document Delivery No.: CF7QATimes Cited: 0Cited Reference Count: 53Chen, Shao-Yu Zheng, Changxi Fuhrer, Michael S. Yan, JunUniversity of Massachusetts Amherst; National Science Foundation Center for Hierarchical Manufacturing CMMI-1025020; ARC DP150103837, FL120100038; ARC DECRA DE140101555This work is supported by the University of Massachusetts Amherst and the National Science Foundation Center for Hierarchical Manufacturing (CMMI-1025020). M.S.F and C.Z. acknowledge support from ARC (DP150103837 and FL120100038). C.Z. acknowledges support from ARC DECRA (DE140101555).Amer chemical socWashington
Uncontrolled Keywords: crystals
Collections: Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing
Depositing User: Robert Stevens
Date Deposited: 12 Nov 2015 18:38
Last Modified: 12 Nov 2015 18:38
URI: http://eprints.internano.org/id/eprint/2340

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