Murari, N.M. and Kumar, A. and Thomas, R. and Katiyar, R.S.. (2008) Fabrication of BiFeO3 capacitor structures with reduced leakage current. In: 17th IEEE International Symposium on the applications of ferroelectrics, FEB 23-28, 2008, Santa Re, NM, USA.Full text not available from this repository.
Multi layered metal-insulator-metal (MIM) structures with BiFeO3 (BFO) and Ba0.25Sr0.75TiO3 (BST) thin films were fabricated by chemical solution deposition. Crystalline structure of BFO was recognized as rhombohedral and was not influenced by the BST intermediate layer. Compared to the homogenous BFO, in the heterostructures, coercivity increased and saturation magnetization reduced. BST intermediate layer between the substrate and BFO layer resulted in the leakage current reduction by 3 orders of magnitude. The frequency and temperature dependent dielectric properties showed space charge accumulation between the layer of BST and BFO, and hence Maxwell-Wagner type dispersion.
|Item Type:||Conference or Workshop Item (Paper)|
|InterNano Taxonomy:||Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films
Nanomanufacturing Characterization Techniques > Charge Transport Characterization
Nanomanufacturing Characterization Techniques > Charge Transport Characterization > Dielectric spectroscopy
|Collections:||Nanomanufacturing Research Collection|
|Depositing User:||Moureen Kemei|
|Date Deposited:||22 Feb 2010 21:28|
|Last Modified:||22 Feb 2010 21:28|
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