Murari, N. M. and Thomas, R. and Pavunny, S. P. and Calzada, J. R. and Katiyar, R. S.. (2009) DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film. Applied Physics Letters, 94 (14). p. 142907. ISSN 00036951
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Official URL: http://dx.doi.org/10.1063/1.3116088
Abstract
Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (Delta V-FB) was investigated as a function of voltage sweep and frequency; Delta V-FB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.
| Item Type: | Article |
|---|---|
| InterNano Taxonomy: | Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films Nanomanufacturing Characterization Techniques Nanomanufacturing Characterization Techniques > Charge Transport Characterization > Dielectric spectroscopy |
| Collections: | Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing Nanomanufacturing Research Collection |
| ID Code: | 307 |
| Deposited By: | Moureen Kemei |
| Deposited On: | 22 Feb 2010 17:33 |
| Last Modified: | 19 Sep 2011 17:42 |
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