DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film

Murari, N. M. and Thomas, R. and Pavunny, S. P. and Calzada, J. R. and Katiyar, R. S.. (2009) DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film. Applied Physics Letters, 94 (14). p. 142907. ISSN 00036951

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Abstract

Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (Delta V-FB) was investigated as a function of voltage sweep and frequency; Delta V-FB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.

Item Type: Article
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films
Nanomanufacturing Characterization Techniques
Nanomanufacturing Characterization Techniques > Charge Transport Characterization > Dielectric spectroscopy
Collections: Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing
Nanomanufacturing Research Collection
Depositing User: Moureen Kemei
Date Deposited: 22 Feb 2010 22:33
Last Modified: 19 Sep 2011 21:42
URI: http://eprints.internano.org/id/eprint/307

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