Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films

Chimmalgi, Anant and Hwang, David J. and Grigoropoulos, Costas P.. (2005) Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films. Nano Letters, 5 (10). pp. 1924-1930. ISSN 1530-6984

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Abstract

The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale using two different optical near-field processing schemes. Both apertureless and tapered fiber near-field scanning optical microscope probes were utilized to deliver highly confined irradiation on the target surface. The various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations were shown to critically depend on the applied laser fluence. Consequently, the crystallized pattern morphology and feature size could be finely controlled. High energy density was observed to impart ablation surrounded by a narrow melt ring. At much lower incident laser energy density, single nanostructures with a lateral dimension of 90 nm were defined.

Item Type: Article
Additional Information: Reprinted with permission from "Nanoscale Rapid Melting and Crystallization of Semiconductor Thin Films", Chimmalgi et al., Nano Lett., 2005, 5 (10), pp 1924–1930. Copyright 2005 American Chemical Society.
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films
Nanomanufacturing Characterization Techniques > Scanning Probe Microscopy > Near-field scanning optical microscopy (NSOM)
Nanomanufacturing Processes > Self Assembly > Colloidal crystallization
Collections: Nanomanufacturing Research Collection
Depositing User: Moureen Kemei
Date Deposited: 22 Mar 2010 21:21
Last Modified: 22 Mar 2010 21:21
URI: http://eprints.internano.org/id/eprint/354

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