Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Li, X. and Cai, W. and An, J. and Kim, S. and Nah, J. and Yang, D. and Piner, R. and Velamakanni, A. and Jung, I. and Tutuc, E. and Banerjee, S. K. and Colombo, L. and Ruoff, R. S.. (2009) Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science, 324 (5932). pp. 1312-1314. ISSN 0036-8075

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Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene, with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.

Item Type: Article
Additional Information: Abstract reprinted by permission from American Association for the Advancement of Science. Copyright 2009.
Uncontrolled Keywords: copper foils, dual gated field effect transistors,silicon dioxide substrate, surface catalysis,
InterNano Taxonomy: Nanomanufacturing Processes > Deposition of Nanostructured Films or Nanostructures > Chemical vapor deposition (CVD)
Nanoscale Objects and Nanostructured Materials > Other Nanostructured Materials > Graphene
Collections: Nanomanufacturing Research Collection
Related URLs:
Depositing User: Mr. Richard L Rosen
Date Deposited: 13 Jul 2010 19:18
Last Modified: 13 Jul 2010 19:18

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