Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source

Hofrichter, Jens and Szafranek, Bartholomäus N. and Otto, Martin and Echtermeyer, Tim J. and Baus, Matthias and Majerus, Anne and Geringer, Viktor and Ramsteiner, Manfred and Kurz, Heinrich. (2009) Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source. Nano Letters, 10 (1). pp. 36-42. ISSN 1530-6984

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We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide and a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon cooling, the carbon segregates to the nickel surface forming a graphene layer over the entire nickel surface. By wet etching of the nickel layer, the graphene layer was allowed to settle on the original substrate. Scanning tunneling microscopy (STM) as well as Raman spectroscopy has been performed for characterization of the layers. Further insight into the morphology of the layers has been gained by Raman mapping indicating micrometer-size graphene grains. Devices for electrical measurement have been manufactured exhibiting a modulation of the transfer current by backgate electric fields. The presented approach allows for mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.

Item Type: Article
Additional Information: Abstract reprinted by permission from American Chemical Society. Copyright 2009.
Uncontrolled Keywords: phase segregation, carbon electronics, ,epitaxial graphene,silicon dioxide substrate, solid-state dissolution, silicon carbide, nickel thin film
InterNano Taxonomy: Nanomanufacturing Processes > Deposition of Nanostructured Films or Nanostructures > Chemical vapor deposition (CVD)
Nanoscale Objects and Nanostructured Materials > Other Nanostructured Materials > Graphene
Collections: Nanomanufacturing Research Collection
Related URLs:
Depositing User: Mr. Richard L Rosen
Date Deposited: 12 Jul 2010 18:33
Last Modified: 12 Jul 2010 18:33

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