Selective growth of Ge islands on nanometer-scale patterned SiO[sub 2]∕Si substrate by molecular beam epitaxy

Yoon, Tae-Sik and Zhao, Zuoming and Liu, Jian and Xie, Ya-Hong and Ryu, Du yeol and Russell, Thomas P. and Kim, Hyun-Mi and Kim, Ki-Bum. (2006) Selective growth of Ge islands on nanometer-scale patterned SiO[sub 2]∕Si substrate by molecular beam epitaxy. Applied Physics Letters, 89 (6). 063107. ISSN 00036951

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Item Type: Article
InterNano Taxonomy: Nanomanufacturing Processes
Collections: Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing
Depositing User: Amulya Gullapalli
Date Deposited: 17 Jul 2011 16:03
Last Modified: 17 Jul 2011 16:03
URI: http://eprints.internano.org/id/eprint/675

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