Selective growth of Ge islands on nanometer-scale patterned SiO[sub 2]∕Si substrate by molecular beam epitaxy

Yoon, Tae-Sik and Zhao, Zuoming and Liu, Jian and Xie, Ya-Hong and Ryu, Du yeol and Russell, Thomas P. and Kim, Hyun-Mi and Kim, Ki-Bum. (2006) Selective growth of Ge islands on nanometer-scale patterned SiO[sub 2]∕Si substrate by molecular beam epitaxy. Applied Physics Letters, 89 (6). 063107. ISSN 00036951

Full text not available from this repository.

Item Type:	Article
InterNano Taxonomy:	Nanomanufacturing Processes
Collections:	Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing
Depositing User:	Amulya Gullapalli
Date Deposited:	17 Jul 2011 16:03
Last Modified:	17 Jul 2011 16:03
URI:	http://eprints.internano.org/id/eprint/675

Actions (login required)

View Item