Metal-ferroelectric-insulator-semiconducor (MFIS) Devices Based on DyScO3 Buffer Layer and Ferroelectic Bi3.25Nd0.75Ti3O12 Thin Film.

Katiyar, Ram S and Murari, N. M. and Palai, R. and Karan, N. K. and Saavedra-Arias, J. J. and Melgarejo, R. and Pradhan, R. and Thomas, R.. (2008) Metal-ferroelectric-insulator-semiconducor (MFIS) Devices Based on DyScO3 Buffer Layer and Ferroelectic Bi3.25Nd0.75Ti3O12 Thin Film. ECS Transactions, 13 (2). pp. 363-371. ISSN 1938-5862

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Item Type: Article
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films
Nanoscale Objects and Nanostructured Materials > Nanodevice Structures > Nanoelectronic circuits and architectures
Collections: Nanomanufacturing Research Collection
Depositing User: Rebecca Reznik-Zellen
Date Deposited: 22 Feb 2010 20:19
Last Modified: 22 Feb 2010 20:19
URI: http://eprints.internano.org/id/eprint/299

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