Metal-ferroelectric-insulator-semiconducor (MFIS) Devices Based on DyScO3 Buffer Layer and Ferroelectic Bi3.25Nd0.75Ti3O12 Thin Film.

Katiyar, Ram S and Murari, N. M. and Palai, R. and Karan, N. K. and Saavedra-Arias, J. J. and Melgarejo, R. and Pradhan, R. and Thomas, R.. (2008) Metal-ferroelectric-insulator-semiconducor (MFIS) Devices Based on DyScO3 Buffer Layer and Ferroelectic Bi3.25Nd0.75Ti3O12 Thin Film. ECS Transactions, 13 (2). pp. 363-371. ISSN 1938-5862

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Official URL: http://dx.doi.org/10.1149/1.2908649


Item Type:Article
InterNano Taxonomy:Nanoscale Objects and Nanostructured Materials > Nanocomposites > Thin films
Nanoscale Objects and Nanostructured Materials > Nanodevice Structures > Nanoelectronic circuits and architectures
Collections:Nanomanufacturing Research Collection
ID Code:299
Deposited By:Rebecca Reznik-Zellen
Deposited On:22 Feb 2010 15:19
Last Modified:22 Feb 2010 15:19

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