Design, Fabrication, Assembly and Characterization of a SWNT Switch for Non-volatile Memory Applications

Somu, Sivasubramanian. (2010) Design, Fabrication, Assembly and Characterization of a SWNT Switch for Non-volatile Memory Applications. In: New England Nanomanufacturing Summit 2010, June 22 - 24, 2010, Lowell, MA. (Unpublished)

[img]
Preview
PDF
SWNT_Switch_new.pdf - Presentation

Download (2120Kb) | Preview

Abstract

A SWNT based non-volatile nano-electromechanical bi-stable switch for memory applications is proposed and fabricated. Conventional E-beam lithography and microfabrication methods are used to fabricate the switch while modified electric field assisted directed assembly process is used to assemble the SWNTs on to these fabricated structures. In this bi-stable switch the actuation of states are achieved at the same voltage when compared to several other SWNT electromechanical devices. Further modifications to the existing design would result in Latches, Flip-Flops, registers, etc which are the back bones of a computer processor chip. These devices can also be incorporated with existing CMOS process to fabricate other volatile memory devices.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: SWNT electromechanical devices, modified electric field assisted directed assembly, microfabrication
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanodevice Structures > Nanoelectronic circuits and architectures
Areas of Application > Electronics and Semiconductor Industries
Nanomanufacturing Processes > Nanopatterning/Lithography > Electron-beam lithography
Collections: National Nanomanufacturing Network Archive > Conferences and Workshops > New England Nanomanufacturing Summit 2010
Related URLs:
Depositing User: Rebecca Reznik-Zellen
Date Deposited: 02 Jul 2010 14:20
Last Modified: 09 Jul 2010 11:46
URI: http://eprints.internano.org/id/eprint/523

Actions (login required)

View Item View Item