Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials

Kim, Myungwoong and Safron, Nathaniel S. and Han, Eungnak and Arnold, Michael S. and Gopalan, Padma. (2010) Fabrication and Characterization of Large-Area, Semiconducting Nanoperforated Graphene Materials. Nano Letters, 10 (4). pp. 1125-1131. ISSN 1530-6984

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We demonstrate the fabrication of nanoperforated graphene materials with sub-20-nm features using cylinder-forming diblock copolymer templates across >1 mm2 areas. Hexagonal arrays of holes are etched into graphene membranes, and the remaining constrictions between holes interconnect forming a honeycomb structure. Quantum confinement, disorder, and localization effects modulate the electronic structure, opening an effective energy gap of 100 meV in the nanopatterned material. The field-effect conductivity can be modulated by 40× (200×) at room temperature (T = 105 K) as a result. A room temperature hole mobility of 1 cm2 V−1 s−1 was measured in the fabricated nanoperforated graphene field effect transistors. This scalable strategy for modulating the electronic structure of graphene is expected to facilitate applications of graphene in electronics, optoelectronics, and sensing.

Item Type: Article
Additional Information: Abstract reprinted by permission from American Chemical Society. Copyright 2010.
Uncontrolled Keywords: field effect, nanoperforated graphene material, transistor,
InterNano Taxonomy: Nanoscale Objects and Nanostructured Materials > Nanostructured Materials > Block copolymers
Areas of Application > Electronics and Semiconductor Industries
Nanoscale Objects and Nanostructured Materials > Other Nanostructured Materials > Graphene
Nanomanufacturing Processes > Nanopatterning/Lithography
Collections: Nanomanufacturing Research Collection
Related URLs:
Depositing User: Mr. Richard L Rosen
Date Deposited: 27 Jul 2010 18:41
Last Modified: 27 Jul 2010 18:41
URI: http://eprints.internano.org/id/eprint/542

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