LaFontaine, B. M. and Naulleau, P. P. and Daga, V. K. and Lin, Y. and Watkins, J. J. and Okoroanyanwu, U. and Petrillo, K. and Ashworth, D. and Peng, H. G. and Soles, C. L.. (2011) Additive-loaded EUV photoresists: performance enhancement and the underlying physics. In: Extreme Ultraviolet. Proceedings of SPIE, 7969 . SPIE.
Full text not available from this repository.Abstract
A series of molecular glasses (MGs) protected with multiple tert-butoxylcarbonylmethyl (tBCM) groups are employed as additives to enhance extreme ultra violet (EUV) photolithographic performance of a hydroxystyrene based Environmentally Stable Chemically Amplified Photoresist (ESCAP). The tBCM groups deprotect to form carboxylic acids that are capable of hydrogen bonding with chain segments of the polymer resist. This approach enables a systematic study of the governing physics underlying the improved lithographic performance. While MGs inhibit solubility in all cases, we find that differences in the structure of the MGs can significantly affect the photoacid diffusivity. In our ongoing optimization of the structure and loading of MGs, photoacid generators (PAGs), and base quenchers, 25 nm to 30 nm resolution has been achieved. The structure-property relationships and the synergistic effects of employing small, multi-functional additives in the polymeric photoresists are studied using various characterizations.
| Item Type: | Book Section |
|---|---|
| InterNano Taxonomy: | Nanomanufacturing Processes > Nanopatterning/Lithography > Extreme ultraviolet (EUV) lithography Nanomanufacturing Processes > Nanopatterning/Lithography Nanoscale Objects and Nanostructured Materials > Nanocomposites > Polymeric |
| Collections: | Nanomanufacturing Research Collection > Nanomanufacturing Nanoscale Science and Engineering Centers > Center for Hierarchical Manufacturing |
| Depositing User: | Robert Stevens |
| Date Deposited: | 03 May 2012 16:41 |
| Last Modified: | 03 May 2012 16:44 |
| URI: | http://eprints.internano.org/id/eprint/1772 |
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